| PART |
Description |
Maker |
| STW20NM60 STP20NM60 STB20NM60 STB20NM60-1 STB20NM6 |
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET
|
STMicroelectronics
|
| STW20NM60FD STP20NM60FD STF20NM60D |
N-CHANNEL Power MOSFET
N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFET
|
STMicroelectronics
ST Microelectronics
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| AOK20N60 |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| FCB20N60F |
N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m
|
Fairchild Semiconductor
|
| STGP20NB60H |
N-CHANNEL 20A - 600V TO-220 POWERMESH IGBT
|
ST Microelectronics
|
| STGP20NB60K |
N-CHANNEL 20A 600V TO-220 POWERMESH IGBT
|
ST Microelectronics
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| U20C60 U20C30 U20C40 U20C50 |
POWER RECTIFIERS(20A/300-600V)
POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| U20D60 U20D30 U20D40 U20D50 |
POWER RECTIFIERS(20A/300-600V)
POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| STGW20NB60KD |
N-CHANNEL 20A 600V TO-247 SHORT CIRCUIT PROOF POWERMESH IGBT
|
ST Microelectronics
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
